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C106 Series
Preferred Devices
Sensitive Gate Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. * Glassivated Surface for Reliability and Uniformity * Power Rated at Economical Prices * Practical Level Triggering and Holding Characteristics * Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability * Sensitive Gate Triggering * Device Marking: Device Type, e.g., C106B, Date Code
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Peak Repetitive Off-State Voltage (Note 1) (Sine Wave, 50-60 Hz, RGK = 1 k, TC = -40 to 110C) C106B C106D, C106D1 C106M, C106M1 On-State RMS Current (180 Conduction Angles, TC = 80C) Average On-State Current (180 Conduction Angles, TC = 80C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = +110C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (Pulse Width v1.0 sec, TC = 80C) Forward Average Gate Power (Pulse Width v1.0 sec, TC = 80C) Forward Peak Gate Current (Pulse Width v1.0 sec, TC = 80C) Operating Junction Temperature Range Storage Temperature Range Mounting Torque (Note 2) Symbol VDRM, VRRM 200 400 600 IT(RMS) IT(AV) ITSM 4.0 2.55 20 Amps Amps Amps 1 I2t PGM PG(AV) IGM TJ Tstg - 1.65 0.5 0.1 0.2 -40 to +110 -40 to +150 6.0 A2s Watt Watt Amp C106B C C in. lb. C106D C106D1 C106M C106M1 TO225AA TO225AA TO225AA TO225AA TO225AA 500/Box 500/Box 500/Box 500/Box 500/Box 2 3 Value Unit Volts
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SCRs 4 AMPERES RMS 200 thru 600 VOLTS
G A K
3
21
TO-225AA (formerly TO-126) CASE 077 STYLE 2
PIN ASSIGNMENT
Cathode Anode Gate
ORDERING INFORMATION
Device Package Shipping
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common.
(c) Semiconductor Components Industries, LLC, 2002
Preferred devices are recommended choices for future use and best overall value.
1
March, 2002 - Rev. 4
Publication Order Number: C106/D
C106 Series
THERMAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RJC RJA TL Max 3.0 75 260 Unit C/W C/W C
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, RGK = 1000 Ohms) IDRM, IRRM TJ = 25C TJ = 110C - - - - 10 100 A A
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note 3) (ITM = 4 A) Gate Trigger Current (Continuous dc) (Note 4) (VAK = 6 Vdc, RL = 100 Ohms) Peak Reverse Gate Voltage (IGR = 10 A) Gate Trigger Voltage (Continuous dc) (Note 4) (VAK = 6 Vdc, RL = 100 Ohms) Gate Non-Trigger Voltage (Continuous dc) (Note 4) (VAK = 12 V, RL = 100 Ohms, TJ = 110C) Latching Current (VAK = 12 V, IG = 20 mA) Holding Current (VD = 12 Vdc) (Initiating Current = 20 mA, Gate Open) TJ = 25C TJ = -40C IH TJ = 25C TJ = -40C TJ = +110C - - - 0.19 0.33 0.07 3.0 6.0 2.0 TJ = 25C TJ = -40C VGD IL - - 0.20 0.35 5.0 7.0 mA TJ = 25C TJ = -40C VGRM VGT 0.4 0.5 0.2 0.60 0.75 - 0.8 1.0 - Volts mA VTM IGT - - - 15 35 - 200 500 6.0 Volts Volts - - 2.2 Volts A
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage (VAK = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms, TJ = 110C) 3. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. 4. RGK is not included in measurement. dv/dt - 8.0 - V/s
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C106 Series
Voltage Current Characteristic of SCR
+ Current Anode + VTM on state IRRM at VRRM IH
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode -
+ Voltage IDRM at VDRM Forward Blocking Region (off state)
100 TC, CASE TEMPERATURE ( C) 90 80 70 60 50 40 30 20 10 HALF SINE WAVE RESISTIVE OR INDUCTIVE LOAD. 50 to 400 Hz DC
P(AV), AVERAGE ON STATE POWER DISSIPATION (WATTS)
110
10 8 6 4 2 0
JUNCTION TEMPERATURE 110C
HALF SINE WAVE RESISTIVE OR INDUCTIVE LOAD 50 TO 400Hz. DC
0
.4
.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
0
.4
.8
1.2
1.6
2.0
2.4
2.6
3.2
3.6
4.0
IT(AV) AVERAGE ON STATE CURRENT (AMPERES)
IT(AV) AVERAGE ON STATE CURRENT (AMPERES)
Figure 1. Average Current Derating
Figure 2. Maximum On-State Power Dissipation
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C106 Series
100 IGT, GATE TRIGGER CURRENT ( mA) 1000 IH, HOLDING CURRENT ( m A) 65
10
100
1 -40 -25
-10
5
20
35
50
80
95
110
10 -40 -25
-10
5
20
35
50
65
80
95
110
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 3. Typical Gate Trigger Current versus Junction Temperature
1.0 VGT , GATE TRIGGER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 -45 -25 -10 5 20 35 50 65 80 95 110 1000 I L , LATCHING CURRENT (m A)
Figure 4. Typical Holding Current versus Junction Temperature
100
10 -40 -25
-10
5
20
35
50
65
80
95
110
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 5. Typical Gate Trigger Voltage versus Junction Temperature
Figure 6. Typical Latching Current versus Junction Temperature
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C106 Series
Package Interchangeability
The dimensional diagrams below compare the critical dimensions of the ON Semiconductor C-106 package with competitive devices. It has been demonstrated that the smaller dimensions of the ON Semiconductor package make it compatible in most lead-mount and chassis-mount applications. The user is advised to compare all critical dimensions for mounting compatibility.
.295 ____ .305 .145 ____ .155 .148 ____ .158 .425 ____ .435 123 .050 ____ .095
.115 ____ .130
.095 ____ .105
.400 ____ .360 .135 ____ .115
.127 ____ DIA .123
.026 ____ .019
5_ TYP .385 ____ .365
.520 ____ .480 .315 ____ .285 .420 ____ .400 .015 ____ .025 .045 ____ .055 .105 ____ .095 .054 ____ .046 .105 ____ .095
.575 ____ .655
.040 .094 BSC .025 ____ .035
.190 ____ .170
.020 ____ .026
ON Semiconductor C-106 Package
Competitive C-106 Package
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C106 Series
PACKAGE DIMENSIONS
TO-225AA (formerly TO-126) CASE 077-09 ISSUE W
-B- U Q
F M
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 ---
-A-
123
H
K
V G S D 2 PL 0.25 (0.010)
M
J R 0.25 (0.010) A
M
A
M
M
B
M
B
M
STYLE 2: PIN 1. CATHODE 2. ANODE 3. GATE
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C106 Series
Notes
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C106 Series
ON Semiconductor is a trademark and is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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8
C106/D

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